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Ni控制掺杂InVO4薄膜的制备及其可见光催化活性
李新军; 樊俊林; 郑少健; 王建华
2006
Source Publication中国有色金属学报
Volume16Issue:12Pages:2104-2108
Cooperation Status其它
Indexed By其他
Language中文
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/277
Collection中国科学院广州能源研究所
Recommended Citation
GB/T 7714
李新军,樊俊林,郑少健,等. Ni控制掺杂InVO4薄膜的制备及其可见光催化活性[J]. 中国有色金属学报,2006,16(12):2104-2108.
APA 李新军,樊俊林,郑少健,&王建华.(2006).Ni控制掺杂InVO4薄膜的制备及其可见光催化活性.中国有色金属学报,16(12),2104-2108.
MLA 李新军,et al."Ni控制掺杂InVO4薄膜的制备及其可见光催化活性".中国有色金属学报 16.12(2006):2104-2108.
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