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Preparation and characterization of Si sheets by renewed SSP technique
Ai, B; Shen, H; Ban, Q; Wang, XJ; Liang, ZC; Liao, XB
2004-10-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume270Issue:3-4Pages:446-454
AbstractSilicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (C) 2004 Elsevier B.V. All rights reserved.
SubtypeArticle
KeywordCrystal Structure Recrystallization Substrates Growth From Melt Semiconducting Silicon
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
DOI10.1016/j.jcrysgro.2004.04.127
WOS Subject ExtendedCrystallography ; Materials Science ; Physics
WOS KeywordFILM CRYSTALLINE SILICON ; SOLAR-CELL APPLICATIONS
Indexed BySCI
Language英语
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000224290100024
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.giec.ac.cn/handle/344007/10205
Collection中国科学院广州能源研究所
Affiliation1.Chinese Acad Sci, Solar Energy Lab, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Ai, B,Shen, H,Ban, Q,et al. Preparation and characterization of Si sheets by renewed SSP technique[J]. JOURNAL OF CRYSTAL GROWTH,2004,270(3-4):446-454.
APA Ai, B,Shen, H,Ban, Q,Wang, XJ,Liang, ZC,&Liao, XB.(2004).Preparation and characterization of Si sheets by renewed SSP technique.JOURNAL OF CRYSTAL GROWTH,270(3-4),446-454.
MLA Ai, B,et al."Preparation and characterization of Si sheets by renewed SSP technique".JOURNAL OF CRYSTAL GROWTH 270.3-4(2004):446-454.
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