Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
Preparation and characterization of Si sheets by renewed SSP technique | |
Ai, B; Shen, H; Ban, Q; Wang, XJ; Liang, ZC; Liao, XB | |
2004-10-01 | |
Source Publication | JOURNAL OF CRYSTAL GROWTH |
Volume | 270Issue:3-4Pages:446-454 |
Abstract | Silicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (C) 2004 Elsevier B.V. All rights reserved. |
Subtype | Article |
Keyword | Crystal Structure Recrystallization Substrates Growth From Melt Semiconducting Silicon |
WOS Headings | Science & Technology ; Physical Sciences ; Technology |
DOI | 10.1016/j.jcrysgro.2004.04.127 |
WOS Subject Extended | Crystallography ; Materials Science ; Physics |
WOS Keyword | FILM CRYSTALLINE SILICON ; SOLAR-CELL APPLICATIONS |
Indexed By | SCI |
Language | 英语 |
WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS ID | WOS:000224290100024 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.giec.ac.cn/handle/344007/10205 |
Collection | 中国科学院广州能源研究所 |
Affiliation | 1.Chinese Acad Sci, Solar Energy Lab, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China |
Recommended Citation GB/T 7714 | Ai, B,Shen, H,Ban, Q,et al. Preparation and characterization of Si sheets by renewed SSP technique[J]. JOURNAL OF CRYSTAL GROWTH,2004,270(3-4):446-454. |
APA | Ai, B,Shen, H,Ban, Q,Wang, XJ,Liang, ZC,&Liao, XB.(2004).Preparation and characterization of Si sheets by renewed SSP technique.JOURNAL OF CRYSTAL GROWTH,270(3-4),446-454. |
MLA | Ai, B,et al."Preparation and characterization of Si sheets by renewed SSP technique".JOURNAL OF CRYSTAL GROWTH 270.3-4(2004):446-454. |
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