Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
| Spectroscopic ellipsometry study of In2O3 thin films | |
| Miao, L.1,3; Tanemura, S.1; Cao, Y. G.2; Xu, G.3 | |
| 2009 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| ISSN | 0957-4522 |
| Volume | 20Issue:Suppl. 1Pages:71-75 |
| Corresponding Author | tanemura-sakae@jfcc.or.jp |
| Abstract | In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode. |
| Subtype | Article |
| Other Abstract | In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode. |
| Keyword | Optical-properties Anatase Growth |
| WOS Headings | Science & Technology ; Technology ; Physical Sciences |
| DOI | 10.1007/s10854-007-9447-6 |
| WOS Subject Extended | Engineering ; Materials Science ; Physics |
| URL | 查看原文 |
| WOS Keyword | OPTICAL-PROPERTIES ; ANATASE ; GROWTH |
| Indexed By | SCI ; ISTP |
| Language | 英语 |
| WOS Subject | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000262106900016 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.giec.ac.cn/handle/344007/3374 |
| Collection | 中国科学院广州能源研究所 |
| Affiliation | 1.JFCC, Mat R&D Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan 2.Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China 3.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China |
| Recommended Citation GB/T 7714 | Miao, L.,Tanemura, S.,Cao, Y. G.,et al. Spectroscopic ellipsometry study of In2O3 thin films[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2009,20(Suppl. 1):71-75. |
| APA | Miao, L.,Tanemura, S.,Cao, Y. G.,&Xu, G..(2009).Spectroscopic ellipsometry study of In2O3 thin films.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,20(Suppl. 1),71-75. |
| MLA | Miao, L.,et al."Spectroscopic ellipsometry study of In2O3 thin films".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 20.Suppl. 1(2009):71-75. |
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