Knowledge Management System Of Guangzhou Institute of Energy Conversion, CAS
| Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition | |
| Ai, B; Shen, H; Liang, ZC; Chen, Z; Kong, GL; Liao, XB | |
| 2006-02-21 | |
| Source Publication | THIN SOLID FILMS
 |
| Volume | 497Issue:1-2Pages:157-162 |
| Abstract | In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved. |
| Subtype | Article |
| Keyword | Chemical Vapour Deposition Electrical Properties And Measurements Scanning Electron Microscopy Polycrystalline Silicon |
| WOS Headings | Science & Technology ; Technology ; Physical Sciences |
| DOI | 10.1016/j.tsf.2005.10.069 |
| WOS Subject Extended | Materials Science ; Physics |
| WOS Keyword | GRAIN-BOUNDARIES ; STATES |
| Indexed By | SCI |
| Language | 英语 |
| WOS Subject | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000234957300025 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.giec.ac.cn/handle/344007/10259 |
| Collection | 中国科学院广州能源研究所 |
| Affiliation | 1.Sun Yat Sen Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Solar Energy Lab, Guangzhou 510640, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Ai, B,Shen, H,Liang, ZC,et al. Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[J]. THIN SOLID FILMS,2006,497(1-2):157-162. |
| APA | Ai, B,Shen, H,Liang, ZC,Chen, Z,Kong, GL,&Liao, XB.(2006).Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition.THIN SOLID FILMS,497(1-2),157-162. |
| MLA | Ai, B,et al."Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition".THIN SOLID FILMS 497.1-2(2006):157-162. |
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